Anodic Passivation Films on Iron in Acidic and Basic Solutions
نویسندگان
چکیده
منابع مشابه
Evaluation of Electrical Breakdown of Anodic Films on Titanium in Phosphate-base Solutions
Titanium is a highly reactive metal so that a thin layer of oxide forms on its surface whenever exposed to the air or other environments containing oxygen. This layer increases the corrosion resistance of titanium. The oxide film is electrochemically formed through anodizing. In this study, anodizing of titanium was performed in phosphate-base solutions such as H3Po4, NaH2Po4, and Na2Hpo4 at 9....
متن کاملEvaluation of Electrical Breakdown of Anodic Films on Titanium in Phosphate-base Solutions
Titanium is a highly reactive metal so that a thin layer of oxide forms on its surface whenever exposed to the air or other environments containing oxygen. This layer increases the corrosion resistance of titanium. The oxide film is electrochemically formed through anodizing. In this study, anodizing of titanium was performed in phosphate-base solutions such as H3Po4, NaH2Po4, and Na2Hpo4 at 9....
متن کاملSimplified point defect model for growth of anodic passive films on iron
We present a simplified point defect model to describe the growth of the primary passive oxide film on the surface of iron. The model postulates a reduced set of elementary interfacial reactions to describe the formation and dissolution of the oxide film. By casting the model in dimensionless form, we obtain a relatively small set of parameters that must be assigned values. Parameter values are...
متن کاملEffect of passivation on stress relaxation in electroplated copper films
The present study investigated the effect of passivation on the kinetics of interfacial mass transport by measuring stress relaxation in electroplated Cu films with four different cap layers: SiN, SiC, SiCN, and a Co metal cap. Stress curves measured under thermal cycling showed different behaviors for the unpassivated and passivated Cu films, but were essentially indifferent for the films pass...
متن کاملHydrogen Passivation of Interstitial Iron in Silicon by Annealing with Pecvd Silicon Nitride Films
This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900C with the silicon nitride films present. The most effective hydrogenation of iron was found ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 1973
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.37.10_1088